SiC MOSFETs Biased C-V Curves: A Temperature Investigation

High temperature pulsed-gate robustness testing of SiC power MOSFETs

High Temperature Modeling and Characterization of 6H SiC MOSFETs

(Abstract) SiC offers the potential to provide high power, high temperature electronics. Our two-dimensional is used to model the current voltage characteristics of a 6H-SiC MOSFET as a function of temperature, from 25C to 200C. (Intro) In our previous paper[1], we developed a new detailed mobility model for Silicon Carbide (SiC) MOSFETs. The new model explicitly accounts for the contribution o...

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

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Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...